THE EFFECT OF ACCELERATED PROTONS ON THE ELECTROPHYSICAL PARAMETERS OF THERMISTORS BASED ON N-SI<NI> AND N-SI<CU>

Kuldashev A. H.; Saidimov Ya. A.; Mannanov M. I.

THE EFFECT OF ACCELERATED PROTONS ON THE ELECTROPHYSICAL PARAMETERS OF THERMISTORS BASED ON N-SI<NI> AND N-SI<CU>

Authors

Kuldashev A. H.
Saidimov Ya. A.
Mannanov M. I. Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan (Tashkent), Uzbekistan

Keywords:

silicon, doping, accelerated proton, temperature sensitivity coefficient, resistivity, electrostatic generator, EG-2 accelerator.

Abstract

Modification of semiconductors by proton beams, which is carried out by controlled introduction of radiation defects into the semiconductor, is analyzed. The effect of accelerated protons on the electrophysical parameters of silicon doped with Ni and Cu impurities is shown.

Downloads

Published

2023-09-10

How to Cite

Kuldashev A. H., Saidimov Ya. A., & Mannanov M. I. (2023). THE EFFECT OF ACCELERATED PROTONS ON THE ELECTROPHYSICAL PARAMETERS OF THERMISTORS BASED ON N-SI<NI> AND N-SI<CU>. Academia Repository, 4(9), 14–18. Retrieved from http://academiarepo.org/index.php/1/article/view/38