COMPOSITION AND STRUCTURE OF THE INTERFACIAL BOUNDARY Si/AI(111) AND Si/Cu(111)

Authors

  • Yorkulov Ruslan makhammadi coals University of Economics and Pedagogy

Keywords:

heterostructure, nanofilms, nanophases, single crystal, energy losses by electrons, intensity, plasma oscillations, photoelectrons.

Abstract

In this work, we found the results of experimental studies on the formation of an interfacial boundary during the deposition of Si and Ge on the surface of Al(111) and Cu(111) single crystals. Optimal modes of deposition and annealing are established for obtaining semiconductor-metal systems.

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Published

2024-02-04

How to Cite

Yorkulov Ruslan makhammadi coals. (2024). COMPOSITION AND STRUCTURE OF THE INTERFACIAL BOUNDARY Si/AI(111) AND Si/Cu(111). Academia Repository, 5(2), 1–6. Retrieved from http://academiarepo.org/index.php/1/article/view/518

Issue

Vol. 5 No. 2 (2024): wos

Section

Articles

License

Copyright (c) 2024 Web of Scientist: International Scientific Research Journal

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.